Surface-electrode Ion Trap Development

被引:2
|
作者
Abbasov, T. [1 ]
Zibrov, S. [2 ]
Sherstov, I. [1 ]
机构
[1] Skolkovo Inst Sci & Technol, Moscow 121205, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
关键词
D O I
10.1134/S0021364023602063
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a segmented linear surface electrode ion trap design that can be used for various applications in optical clocks and quantum computation based on trapped Yb-171(+) ions. Our simulations show that calculated trap depth can reach up to several eV and that the pseudopotential minimum of the trap is located above the trap surface at a distance greater than 80 & mu;m. The described pseudopotential simulations and calculations of different trap parameters can be used to design the planar trap with required parameters. This design could be scaled to store a long chain of ions and used for quantum logic applications as well.
引用
收藏
页码:215 / 219
页数:5
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