Rare earth element Ce enables high thermoelectric performance in n-type SnSe polycrystals

被引:9
|
作者
Li, Shan [1 ,2 ,3 ]
Yin, Li [2 ,3 ]
Liu, Yijie [2 ,3 ]
Wang, Xiaodong [2 ,3 ]
Chen, Chen [2 ,3 ]
Zhang, Qian [2 ,3 ,4 ]
机构
[1] Northwestern Polytech Univ, Sch Civil Aviat, Xian 710072, Peoples R China
[2] Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Peoples R China
[3] Harbin Inst Technol, Inst Mat Genome & Big Data, Shenzhen 518055, Peoples R China
[4] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China
基金
中国国家自然科学基金;
关键词
Thermoelectric; N -type SnSe; Ce doping; PbTe alloying; THERMAL-CONDUCTIVITY; DOPED SNSE;
D O I
10.1016/j.jmst.2022.09.054
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
SnSe exhibits excellent thermoelectric performance in both n-and p-type single crystals, but its n-type polycrystals are restricted because of the lower electrical conductivity. Here, we dually introduced rare earth element Ce and PbTe to optimize the thermoelectric properties of n-type SnSe polycrystals. It is demonstrated that Ce is an effective cationic dopant to convert SnSe from p-to n-type conductor, and an enhanced peak zT value of-0.9 at 823 K was obtained in Sn0.97Ce0.03Se due to the improved power factor. Furthermore, PbTe alloying not only reduced the band gap to increase the carrier concentration, but also enhanced the density-of-states effective mass, and hence further increased the power factor in the whole measured temperature range. Meanwhile, the lattice thermal conductivity was significantly reduced owing to the enhanced phonon scattering by the mass and strain fluctuations. As a result, the peak zT value was increased to-1.3 for Sn0.9Pb0.07Ce0.03Se0.93Te0.07 together with a high average zT value of-0.52 in the temperature range of 300 to 823 K.(c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码:234 / 241
页数:8
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