Single-cluster electronics using metallic clusters: Fabrications, regulations, and applications

被引:2
|
作者
Wei, Caiyun
Xu, Wei
Ji, Shurui
Huang, Ruiyun [1 ]
Liu, Junyang
Su, Wenqiu
Bai, Jie
Huang, Jiale [1 ]
Hong, Wenjing [1 ]
机构
[1] Xiamen Univ, Coll Chem & Chem Engn, Natl Engn Res Ctr Chem Elect Mfg, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
single-cluster junctions; electronic properties; electron transport; metallic clusters; structure regulation; ROOM-TEMPERATURE; COULOMB-BLOCKADE; MOLECULE CONDUCTANCE; CHARGE-TRANSPORT; SIZE; NANOPARTICLES; NANOCLUSTERS; JUNCTION; MANIPULATION; AU-25;
D O I
10.1007/s12274-023-5774-z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Metallic clusters, ranging from 1 to 2 nm in size, have emerged as promising candidates for creating nanoelectronic devices at the single-cluster level. With the intermediate quantum properties between metals and semiconductors, these metallic clusters offer an alternative pathway to silicon-based electronics and organic molecules for miniaturized electronics with dimensions below 5 nm. Significant progress has been made in studies of single-cluster electronic devices. However, a clear guide for selecting, synthesizing, and fabricating functional single-cluster electronic devices is still required. This review article provides a comprehensive overview of single-cluster electronic devices, including the mechanisms of electron transport, the fabrication of devices, and the regulations of electron transport properties. Furthermore, we discuss the challenges and future directions for single-cluster electronic devices and their potential applications.
引用
收藏
页码:65 / 78
页数:14
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