Phase-sensitive large Kerr nonlinearity in semiconductor quantum wells

被引：1

作者：

Nath, Monika ^{[1
]}

Mukherjee, Rohit ^{[2
]}

Borgohain, Nitu ^{[1
]}

Hazra, Rohit ^{[3
]}

机构：

[1] Univ Sci & Technol Meghalaya, Dept Phys, Ri Bhoi 793101, Meghalaya, India

[2] Sarala Birla Univ, Dept Phys, Theoret Photon Grp, Ranchi 835103, Jharkhand, India

[3] GD Goenka Publ Sch, Dept Phys, Dakshineswar 700035, West Bengal, India

来源：

MODERN PHYSICS LETTERS B | 2024年 / 38卷 / 25期

关键词：

Semiconductor quantum wells; electromagnetically induced transparency; Kerr nonlinearity; rotating wave approximation; SLOW LIGHT; COHERENCE; DYNAMICS;

D O I：

10.1142/S0217984924502385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents a comprehensive investigation on Kerr nonlinearity in a three-level semiconductor quantum well (SQW) superlattice and validates the existence of large Kerr nonlinearity of the order of 104W-1m-1 in the vicinity of an electromagnetically induced transparency (EIT) window. The Kerr nonlinearity is found to vary with the relative phase of the applied optical fields, and by selecting suitable relative phases, an enhanced Kerr nonlinearity can be obtained. The results may find significant applications in optoelectronic and photonic devices.

引用

页数：11

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