0.5 V Multiple-Input Multiple-Output Differential Difference Transconductance Amplifier and Its Applications to Shadow Filter and Oscillator

被引:6
|
作者
Khateb, Fabian [1 ,2 ,3 ]
Kumngern, Montree [4 ]
Kulej, Tomasz [5 ]
Ranjan, Rajeev Kumar [6 ]
机构
[1] Brno Univ Technol, Dept Microelect, Brno 60190, Czech Republic
[2] Czech Tech Univ, Fac Biomed Engn, Kladno 27201, Czech Republic
[3] Univ Def, Dept Elect Engn, Brno 66210, Czech Republic
[4] King Mongkuts Inst Technol Ladkrabang, Sch Engn, Dept Telecommun Engn, Bangkok 10520, Thailand
[5] Czestochowa Tech Univ, Dept Elect Engn, PL-42201 Czestochowa, Poland
[6] IIT ISM Dhanbad, Dept Elect Engn, Dhanbad 826004, India
关键词
Band-pass filters; Voltage control; Transconductance; Transistors; Q-factor; MISO communication; Tuning; CMOS technology; Low voltage; Low power electronics; Differential difference transconductance amplifier (DDTA); shadow filter; shadow oscillator; analog filter; low-voltage; low-power CMOS; UNIVERSAL FILTER; FREQUENCY; CDTA;
D O I
10.1109/ACCESS.2023.3260146
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents new applications of low-voltage and low-power multiple-input multiple output differential difference transconductance amplifier (DDTA). The multiple-input bulk-driven MOS transistor (MIBD MOST) technique provides multiple-input of the active device that simplifies the application ' s topology and reduces its power consumption. The proposed DDTA has been used to realize multiple-input single-output shadow filter. Both voltage-and transimpedance-mode filtering functions can be obtained. The natural frequency and the quality factor of the shadow filter can be independently and electronically controlled using DDTA-based amplifiers. The proposed shadow filter has been modified to work as a shadow oscillator. The condition and frequency of oscillation can be controlled independently and electronically. The DDTA is capable to work with 0.5V supply voltage and consumes 218.2 nW. The applications have been designed and simulated in Cadence using 0.18 mu m TSMC CMOS technology.
引用
收藏
页码:31212 / 31227
页数:16
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