Enhanced soft magnetic properties and high-frequency stability of FeNiMo powder cores by coating SiO2 insulation layer

被引:6
|
作者
Lai, Jinming [1 ,2 ]
Xiao, Likang [3 ]
Xiong, Zhengwei [4 ]
Fang, Leiming [5 ]
Zhu, Wenkun [4 ]
Kuang, Fangguang [6 ]
Gao, Zhipeng [7 ]
机构
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
[2] China Elect Technol Grp Corp, Res Inst 29, Sichuan Broadband Microwave Circuit High Dens Inte, Chengdu 610036, Peoples R China
[3] Univ Elect Sci & Technol China, Southwest Inst Appl Magnetism, Sch Elect Sci & Engn, Mianyang 621010, Peoples R China
[4] Southwest Univ Sci & Technol, Sichuan Civil Mil Integrat Inst, Sch Math & Phys, Joint Lab Extreme Condit Matter Properties, Mianyang 621010, Peoples R China
[5] China Acad Engn Phys, Inst Phys Nucl & Chem, Mianyang 621900, Peoples R China
[6] Gannan Normal Univ, Sch Phys & Elect Informat, Ganzhou 341000, Peoples R China
[7] China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China
基金
中国国家自然科学基金;
关键词
HIGH-RESISTIVITY; HEAT-TREATMENT; COMPOSITES; MICROSTRUCTURES; PERMEABILITY;
D O I
10.1039/d3ra01523h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
FeNiMo/SiO2 powder cores were prepared using the sol-gel method. Tetraethyl orthosilicate (TEOS) was added to produce an amorphous SiO2 coating outside the FeNiMo particles to form a core-shell structure. The thickness of the SiO2 layer was designed by varying the concentration of TEOS, and the optimized permeability and magnetic loss of the powder core could achieve 78.15 and 633.44 kW m(-3) at 100 kHz and 100 mT, respectively. Compared with other soft magnetic composites, these FeNiMo/SiO2 powder cores have a significantly higher effective permeability and a lower core loss. Surprisingly, the high-frequency stability of permeability could be substantially enhanced through the insulation coating process in which mu(f)/mu(100 kHz) could reach 98.7% at 1 MHz. In comparison with 60 mu commercial products, the comprehensive soft magnetic properties of the FeNiMo/SiO2 cores were superior to most manufacturers, which would be potentially applied to high-performance inductance devices in high-frequency ranges.
引用
收藏
页码:15892 / 15900
页数:9
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