Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells

被引:1
|
作者
Shcherbakov, Dmitry [1 ,2 ]
Voigt, Greyson [1 ,3 ]
Memaran, Shahriar [4 ,5 ]
Liu, Gui-Bin [6 ]
Wang, Qiyue [7 ]
Watanabe, Kenji [8 ]
Taniguchi, Takashi [9 ]
Smirnov, Dmitry [4 ,10 ]
Balicas, Luis [4 ,5 ,10 ]
Zhang, Fan [7 ]
Lau, Chun Ning [1 ]
机构
[1] Ohio State Univ, Dept Phys, Columbus, OH 43221 USA
[2] Carnegie Mellon Univ, Departmentof Phys, Pittsburgh, PA 15213 USA
[3] Ohio State Univ, Dept Phys, UnitedState, Columbus, OH 43221 USA
[4] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[5] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
[6] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
[7] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
[8] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Tsukuba 3050044, Japan
[9] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan
[10] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
基金
美国国家科学基金会;
关键词
2D materials; second subband; InSe; quantum well; spin-orbitcoupling; quantum Hallferromagnetism; ELECTRON-MOBILITY;
D O I
10.1021/acs.nanolett.3c04121
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A two-dimensional (2D) quantum electron system is characterized by quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the intersubband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we demonstrate electrostatic population and characterization of the second subband in few-layer InSe quantum wells, with giant tunability of its energy, population, and spin-orbit coupling strength, via the control of not only layer thickness but also the out-of-plane displacement field. A modulation of as much as 350% or over 250 meV is achievable, underscoring the promise of InSe for tunable infrared and THz sources, detectors, and modulators.
引用
收藏
页码:3851 / 3857
页数:7
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