Luminescence Properties of Tb3+-Doped LuAG Films Prepared by Pechini Sol-Gel Method

被引：0

作者：

游宝贵 ^{[1
]}

尹民 ^{[1
]}

张慰萍 ^{[1
]}

郭海 ^{[2
]}

林林 ^{[3
]}

机构：

[1] Structure Research Laboratory, Chinese Academy of Sciences, Hefei 230026, China,Physics Department, University of Science and Technology of China, Hefei 230026,China 2. Department of Physics, Zhejian

来源：

Journal of Rare Earths | 2006年 / 06期

基金：

中国国家自然科学基金;

关键词：

sol-gel; LuAG; luminescence properties; thin film; concentration dependence; rare earths;

D O I：

暂无

中图分类号：

O482.31 [发光学];

学科分类号：

070205 ; 0805 ; 080502 ; 0809 ;

摘要：

Lu3Al5O 12 （LuAG） thin films with different Tb 3+ concentration were prepared on carefully cleaned （111） silicon wafer by a Pechini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb 3+ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Tb 3+ on the luminescent properties were also investigated. For a comparison study, Tb 3+ -doped LuAG powders were also prepared by the same sol-gel method.

引用

页码：745 / 748

页数：4

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