Waveguide mechanism and design of thermal contact resistance at metal rheologic interface

被引:0
|
作者
胡仕成
黄明辉
李晓谦
钟掘
机构
[1] Changsha 410083
[2] China
[3] College of Mechanical and Electrical Engineering
[4] College of Mechanical and Electrical Engineering Central South University
关键词
free electron; phonon; rheologic interface; thermal contact resistance; oxide film;
D O I
暂无
中图分类号
TG111 [金属物理学];
学科分类号
0702 ; 070205 ;
摘要
The main factors and their varied disciplines affecting the heat transfer at the metal rheologic interface were studied from the waveguide mechanism of heat transfer of electrons and phonons, guiding the design of thermal contact resistance through studying the microscale mechanism of heat transfer at the interface. The results show that electron has stronger quantum tunneling effect when the thickness of oxide film is smaller than de Broglie wavelength of electron and the heat conduction of oxide film produces microscale effect. The thickness and nature of oxide film dominate the heat transfer at the metal rheologic interface. The main means to design the interface contact conductance are to control the formation of oxide film as well as the process of machining of roller surface and lubrication of interface.
引用
收藏
页码:579 / 584
页数:6
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