Investigation of trap states in Al2O3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

被引：0

作者：

张鹏 ^{[1
]}

赵胜雷 ^{[2
]}

薛军帅 ^{[2
]}

祝杰杰 ^{[1
]}

马晓华 ^{[1
]}

张进成 ^{[2
]}

郝跃 ^{[2
]}

机构：

[1] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology,Xidian University

[2] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

来源：

Chinese Physics B | 2015年 / 12期

基金：

中国国家自然科学基金;

关键词：

InAlN; trapping; frequency-dependent conductance; metal–oxide–semiconductor high-electronmobility transistors;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

In this paper the trapping effects in Al2O3/In0.17Al0.83N/Ga N MOS-HEMT(here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/In Al N and In Al N/Ga N interface. Trap states in In Al N/Ga N heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas(2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the In Al N barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.

引用

页码：509 / 512

页数：4

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