The electrical properties of sulfur-implanted cubic boron nitride thin films

被引：0
|
作者：
邓金祥 [1 ]
秦扬 [1 ]
孔乐 [1 ]
杨学良 [1 ]
李廷 [1 ]
赵卫平 [1 ]
杨萍 [1 ]
机构：
[1] College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
来源：
Chinese Physics B | 2012年 / 21卷 / 04期
基金：
中国国家自然科学基金;
关键词：
cubic boron nitride; ion implantation; surface resistivity; activation energy;
D O I：
暂无
中图分类号：
O484.42 [];
学科分类号：
080501 ; 1406 ;
摘要：
Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10 15 ions/cm 2 and 10 16 ions/cm 2 . The doped c-BN thin films are then annealed at a temperature between 400°C and 800 C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.
引用
收藏
页码：462 / 464
页数：3
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