The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films

被引:0
|
作者
杨燕 [1 ,2 ,3 ]
季佩宇 [4 ]
李茂洋 [5 ]
余耀伟 [6 ]
黄建军 [1 ,3 ]
于斌 [1 ,2 ]
吴雪梅 [5 ]
黄天源 [5 ]
机构
[1] College of Physics and Optoelectronic Engineering, Shenzhen University
[2] Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University
[3] Advanced Energy Research Center, Shenzhen University
[4] School of Optoelectronic Science and Engineering, Soochow University
[5] School of Physical Science and Technology, Soochow University
[6] Institute of Plasma Physics, Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TB383.2 []; O539 [等离子体物理的应用];
学科分类号
070204 ; 070205 ; 080501 ; 1406 ;
摘要
A reactive helicon wave plasma(HWP) sputtering method is used for the deposition of tungsten nitride(WNx) thin films. N2is introduced downstream in the diffusion chamber. The impacts of N2on the Ar-HWP parameters, such as ion energy distribution functions(IEDFs), electron energy probability functions(EEPFs), electron temperature(Te) and density(ne), are investigated. With the addition of N2, a decrease in electron density is observed due to the dissociative recombination of electrons with N2~+.The similar IEDF curves of Ar+and N2~+indicate that the majority ofN2~+stems from the charge transfer in the collision between Ar+and N2. Moreover, due to the collisions between electrons and N2ions, EEPFs show a relatively lower Tewith a depletion in the high-energy tail. With increasing negative bias from 50 to 200 V,a phase transition from hexagonal WN to fcc-WN0.5is observed, together with an increase in the deposition rate and roughness.
引用
收藏
页码:180 / 186
页数:7
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