The influence of the Dresselhaus spin-orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions

被引：0
|
作者：
王晓华 [1 ]
安兴涛 [1 ]
刘建军 [1 ,2 ]
机构：
[1] College of Physical Science and Information Engineering, Hebei Normal University
[2] Hebei Advanced Thin Films Laboratory
来源：
Chinese Physics B | 2009年 / 18卷 / 02期
基金：
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词：
Dresselhaus spinorbit coupling; ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures; transfer-matrix method;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper investigates the effect of Dresselhaus spin-orbit coupling on the spin-transport properties of ferro- magnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that (i) the polarization can be enhanced by reducing the insulator layers at zero temperature, and (ii) the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin-orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin-orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy E F of the ferromagnetic electrodes.
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页码：749 / 756
页数：8
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