Built-in electric field thickness design for betavoltaic batteries

Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries:after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.