Improving reverse intersystem crossing of MR-TADF emitters for OLEDs

被引：0
|
作者：
Xufeng Luo [1 ]
Lixiu Zhang [2 ]
Youxuan Zheng [1 ]
Liming Ding [2 ]
机构：
[1] State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University
[2] Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology
来源：
Journal of Semiconductors | 2022年 / 43卷 / 11期
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TN383.1 []; TB30 [工程材料一般性问题];
学科分类号：
0803 ; 0805 ; 080502 ;
摘要：
Thermally activated delayed fluorescence(TADF) emitter is a promising organic light-emitting diode(OLED) material due to low cost, wide luminous color gamut and 100% exciton utilization efficiency[1]. To achieve high TADF performance, a feasible strategy is to construct a twisted donor–acceptor(D–A) unit,
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页码：8 / 11
页数：4
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