Synthesis and electrical characterization of tungsten oxide nanowires

被引:1
|
作者
黄睿 [1 ]
朱静 [1 ]
于荣 [1 ]
机构
[1] Beijing National Center for Electron Microscopy,The State Key Laboratory of New Ceramics and Fine Processing,Laboratory of Advanced Materials,Department of Materials Science and Engineering,Tsinghua University
基金
中国国家自然科学基金;
关键词
tungsten oxide nanowires; chemical vapour deposition(CVD); electrical characterization; metal-semiconductor-metal(MSM) structure;
D O I
暂无
中图分类号
TB383.1 [];
学科分类号
070205 ; 080501 ; 1406 ;
摘要
Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition(CVD) method with vapour-solid(VS) mechanism.Tin powders are used to control oxygen concentration in the furnace,thereby assisting the growth of the tungsten oxide nanowires.The grown tungsten oxide nanowires are determined to be of crystalline W 18 O 49.Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope(TEM) to investigate the electrical properties of the nanowires.All of the Ⅰ-Ⅴ curves observed are symmetric,which reveals that the tungsten oxide nanowires are semiconducting.Quantitative analyses of the experimental Ⅰ-Ⅴ curves by using a metal-semiconductor-metal(MSM) model give some intrinsic parameters of the tungsten oxide nanowires,such as the carrier concentration,the carrier mobility and the conductivity.
引用
收藏
页码:3024 / 3030
页数:7
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