All-CMOS temperature compensated current reference

被引：0
|
作者：
赵喆 [1 ]
周锋 [1 ]
黄圣专 [1 ]
机构：
[1] State Key Laboratory of ASIC & System Fudan University
来源：
Journal of Semiconductors | 2010年 / 06期
关键词：
CMOS integrated circuits; current reference; temperature compensation;
D O I：
暂无
中图分类号：
TN432 [场效应型];
学科分类号：
080903 ; 1401 ;
摘要：
This paper presents a novel temperature independent current reference based on the theory of mutual compensation of mobility and threshold voltage.It is completely compatible with standard CMOS-technology.The experiment results indicate that the temperature coefficient of this current reference is less than 290 ppm/℃over a temperature range from-20 to 110℃.
引用
收藏
页码：159 / 162
页数：4
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