Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy

被引：0
|
作者：
李毅
易新建
蔡丽萍
机构：
来源：
半导体学报 | 2000年 / 01期
关键词：
Characterization; HgCdTe; LPE; XPS;
D O I：
暂无
中图分类号：
TN364 [半导体光电管];
学科分类号：
摘要：
The surface oxidative characterization of Liquid Phase Epitaxy (LPE) HgCdTe epilayer has been studied by X\|ray Photoelectron Spectroscopy (XPS) and Scanning Electron Microscopy (SEM). HgCdTe surface is exposed by various processing steps. After measurement and analysis,we draw a conclusion that the native oxide film can be reduced and removed by the solution of lactic acid in ethylene glycol after being etched by bromine in absolute ethyl alcohol. The result shows the main optical and electrical parameters have not been changed after the treatment and the processing method given here can successfully remove the native oxides of LPE HgCdTe epilayer to obtain a clean surface. It indicates that the pre\|treatment before HgCdTe surface passivation can affect the passivant/ HgCdTe interface properties.
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页码：8 / 11
页数：4
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