Plasma tailoring in WTe2 nanosheets for efficiently boosting hydrogen evolution reaction

被引:3
|
作者
Xin Wang [1 ,2 ,3 ]
Jun Wang [1 ,2 ,4 ]
Bin Wei [2 ]
Nan Zhang [2 ]
Junyuan Xu [2 ]
Hongwei Miao [2 ]
Lifeng Liu [2 ]
Chenliang Su [1 ]
Ying Li [1 ,2 ]
Zhongchang Wang [2 ]
机构
[1] International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University
[2] School of Electrical Engineering and Automation, Wuhan University
[3] Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Guangdong Engineering Technology Research Center of Efficient Green Energy and Environment Protection Materials, Guangdong Provincial Engineering Technology Research Center f
[4] International Iberian Nanotechnology Laboratory (INL)
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Defects; WTe2; Hydrogen evolution reaction; Plasma etching; Electrocatalysts;
D O I
暂无
中图分类号
TQ426 [催化剂(触媒)]; TQ116.2 [氢气]; TB383.1 [];
学科分类号
080502 ; 081705 ;
摘要
2D transition metal dichalcogenides (TMDs) have been considered as promising non-precious electrocatalysts for the hydrogen evolution reaction (HER).However,their limited active sites and poor electric conductivity pose a significant hurdle to their HER performance,resulting in a large overpotential.Here,we report the defect engineering in ultrathin tungsten telluride (WTe) nanosheets with semimetal nature to improve hydrogen evolution effectively.We find that the oxygen plasma etching imposes a cutting effect on WTenanosheets,resulting in a large number of tungsten vacancies.Particularly,the sample after plasma treatment for 10 min shows a feather-like structure with an overpotential of 251m V at 10 m A/cm~2and a Tafel slope of 94 m V/dec,which is 4 times lower than the Tafel slope of pristine nanosheets.Further first-principles calculations shed light on the evolution of defect-rich WTenanosheets and offer rational explanation to their superiority in efficient hydrogen evolution.
引用
收藏
页码:170 / 175
页数:6
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