Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

被引：0

作者：

陈牧笛 ^{[1
]}

朱晓东 ^{[1
]}

柯博 ^{[1
]}

丁芳 ^{[1
]}

温晓辉 ^{[1
]}

周海洋 ^{[1
]}

机构：

[1] CAS Key Laboratory of Basic Plasma Physics,Department of Modern Physics,University of Science and Technology of China

来源：

Plasma Science and Technology | 2010年 / 12卷 / 05期

基金：

中国国家自然科学基金;

关键词：

SiC; nanowires; plasma;

D O I：

暂无

中图分类号：

TN304.055 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-depositionby using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiCNWs)grew on Au-coated silicon substrate with core-shell structure, where the core consisted ofpolycrystalline SiC grains and the shell exhibited amorphous structure. The featured structuressuch as cones, polyhedrons, ball-liked particles were observed in the case without, plasraa assistance.The underlying mechanism for the growth of nanostructures was also discussed. The highchemical activity induced by the plasma process plays an important role in using monomer togenerate nanostructure.

引用

页码：547 / 550

页数：4

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