低温热氧化法制备Bi2Mo3O12介质薄膜

被引：0

作者：

杨俊锋

丁明建

冯毅龙

庄严

机构：

[1] 广州天极电子科技有限公司

来源：

广州化学 | 2018年 / 43卷 / 03期

关键词：

介电性能; 薄膜; 热氧化; Bi2Mo3O12;

D O I：

10.16560/j.cnki.gzhx.20180302

中图分类号：

TB383.2 [];

学科分类号：

摘要：

通过直流磁控溅射法在Si/Si O2/Pt基片表面沉积摩尔比为2∶3的Bi/Mo多层薄膜。系统研究了热氧化温度对上述薄膜的物相组成、微观形貌、介电性能的影响。X-射线衍射（XRD）数据表明,420～480℃可热氧化形成介质薄膜。420℃氧化,薄膜的物相为Bi2O3、Mo O3、Bi2Mo O6和Bi2Mo3O12;450℃和480℃氧化,薄膜的主相均为Bi2Mo3O12,另有少量Bi2Mo O6存在。扫描电镜（SEM）观察结果显示,薄膜在450℃即已致密、均匀。介电性能测试结果显示,480℃氧化的介质薄膜,具有较优的介电性能:1 k Hz测量,介电常数约15.6,介电损耗约0.65%;5.55 k V/mm电场强度下,漏电流密度约3.4×10-7 A/mm2。考虑到Bi/Mo薄膜极低的成膜温度（480℃）及直流磁控溅射Bi/Mo金属薄膜较大的沉积速率（92 nm/min）,直流磁控溅射Bi/Mo金属薄膜,然后热氧化成Bi2Mo3O12介质薄膜,在工业上具有应用价值,有望应用于嵌入式薄膜电容器的制备。

引用

页码：24 / 29

页数：6

共 6 条

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