Mid-infrared silicon photonic waveguides and devices [Invited]

被引:1
|
作者
YI ZOU [1 ,2 ]
SWAPNAJIT CHAKRAVARTY [3 ]
CHI-JUI CHUNG [2 ]
XIAOCHUAN XU [3 ]
RAY T.CHEN [2 ,3 ]
机构
[1] School of Information Science and Technology, Shanghai Tech University
[2] Microelectronic Research Center, Department of Electrical and Computer Engineering, University of Texas,Austin
基金
美国国家航空航天局; 中国国家自然科学基金; 美国国家科学基金会;
关键词
Invited; Mid-infrared silicon photonic waveguides and devices; SOI; MIR;
D O I
暂无
中图分类号
TN252 [光波导];
学科分类号
0702 ; 070207 ;
摘要
Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics, high index contrast, small footprint, and low cost, as well as its optical transparency in the nearinfrared and parts of mid-infrared(MIR) wavelengths(from 1.1 to 8 μm). While considerations of micro-and nano-fabrication-induced device parameter deviations and a higher-than-desirable propagation loss still serve as a bottleneck in many on-chip data communication applications, applications as sensors do not require similar stringent controls. Photonic devices on chips are increasingly being demonstrated for chemical and biological sensing with performance metrics rivaling benchtop instruments and thus promising the potential of portable, handheld,and wearable monitoring of various chemical and biological analytes. In this paper, we review recent advances in MIR silicon photonics research. We discuss the pros and cons of various platforms, the fabrication procedures for building such platforms, and the benchmarks demonstrated so far, together with their applications. Novel device architectures and improved fabrication techniques have paved a viable way for realizing low-cost, high-density,multi-function integrated devices in the MIR. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.
引用
收藏
页码:254 / 276
页数:23
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