Monolithic semi-polar(1■01) InGaN/GaN near white light-emitting diodes on micro-striped Si(100) substrate

被引：0
|
作者：
王琦 [1 ,2 ]
袁国栋 [1 ,2 ]
刘文强 [1 ,2 ]
赵帅 [1 ,2 ]
张璐 [1 ,2 ]
刘志强 [1 ,2 ]
王军喜 [1 ,2 ]
李晋闽 [1 ,2 ]
机构：
[1] Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application
[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
来源：
Chinese Physics B | 2019年 / 28卷 / 08期
基金：
中国国家自然科学基金; 美国国家科学基金会;
关键词：
InGaN/GaN MQWs; near white light-emitting diodes; Si(100) substrate;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
The epitaxial growth of novel GaN-based light-emitting diode(LED) on Si(100) substrate has proved challenging.Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si(100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells(MQWs) with different well widths are grown on semi-polar(1■01)planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission.
引用
收藏
页码：353 / 358
页数：6
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