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1.31.55μm GAInNAsSb Lasers
被引：0
|作者：
James S. Harris
机构：
[1] CA 94305-4075
[2] Solid State and Photonics Lab
[3] Stanford University
来源：
关键词：
GaAs;
very;
as;
In;
that;
m GAInNAsSb Lasers;
been;
from;
for;
of;
in;
with;
Sb;
D O I：
暂无
中图分类号：
O432.12 [];
学科分类号：
070207 ;
0803 ;
摘要：
The realization of long wavelength lasers on GaAs provides the opportunity to produce both much lower cost vertical cavity lasers and high power lasers. Results of work on the GaInNAsSb system to realize such lasers are described.
引用
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页码：313 / 314
页数：2
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