Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction

被引：0
|
作者：
Xu Wen 1
机构：
来源：
Journal of Semiconductors | 2006年 / 02期
关键词：
InGaAs/InAlAs HEMT; 2D modeling and simulation; polarization charges; quantum effects;
D O I：
暂无
中图分类号：
O471.1 [半导体量子理论];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
A systematic theoretical approach is developed to study the electronic and transport properties of a two-dimensional electron gas (2DEG) in the presence of spin-orbit interactions induced by the Rashba effect.The standard random-phase approximation is employed to calculate the screening length caused by electron-electron interaction in different transition channels.The quantum and transport mobilities in different spin branches are evaluated using the momentum-balance equation derived from the Boltzmann equation,in which the electron interactions with both the remote and background impurities are taken into account in an InAlAs/InGaAs heterojunction at low-temperatures.
引用
收藏
页码：204 / 217
页数：14
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