Topological quantum memory interfacing atomic and superconducting qubits

被引:0
|
作者
Zheng Yuan Xue [1 ]
Zhang Qi Yin [2 ]
Yan Chen [3 ]
Zi Dan Wang [4 ]
Shi Liang Zhu [5 ]
机构
[1] Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,and School of Physics and Telecommunication Engineering, South China Normal University
[2] Center for Quantum Information, Institute of Interdisciplinary Information Science, Tsinghua University
[3] Department of Physics, State Key Laboratory of Surface Physics and Laboratory of Advanced Materials,Fudan University
[4] Department of Physics and Center of Theoretical and Computational Physics, The University of Hong Kong
[5] National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University
基金
中国国家自然科学基金;
关键词
topological quantum memory; opto-electro-mechanics; quantum interface;
D O I
暂无
中图分类号
TP333 [存贮器];
学科分类号
081201 ;
摘要
We propose a scheme to manipulate a topological spin qubit which is realized with cold atoms in a one-dimensional optical lattice.In particular, by introducing a quantum opto-electro-mechanical interface, we are able to first transfer a superconducting qubit state to an atomic qubit state and then to store it into the topological spin qubit. In this way, an efficient topological quantum memory could be constructed for the superconducting qubit. Therefore, we can consolidate the advantages of both the noise resistance of the topological qubits and the scalability of the superconducting qubits in this hybrid architecture.
引用
收藏
页码:28 / 33
页数:6
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