Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

被引：1
|
作者：
曹琳 [1 ]
蒲红斌 [1 ]
陈治明 [1 ]
臧源 [1 ]
机构：
[1] Department of Electronic Engineering,Xi’an University of Technology
来源：
Chinese Physics B | 2012年 / 01期
基金：
中国国家自然科学基金;
关键词：
4H-SiC; semi-superjunction; Schottky barrier diode; softness factor;
D O I：
暂无
中图分类号：
TN311.7 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
In this paper,a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated.The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures,which can be achieved without increasing the process difficulty.The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios,and that by using the semi-SJ structure,specific on-resistance can be reduced without decreasing the softness factor.It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.
引用
收藏
页码：449 / 452
页数：4
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