An Axisymmetric Numerical Model for Simulating Kinetically-Limited Growth of a Cylindrical Rod in 3D Laser-induced Chemical Vapor Deposition

被引:0
|
作者
R.Nassa [8 ,2002 ]
机构
关键词
Numerical model; LCVD; Cylindrical rod growth; Least squares optimization;
D O I
暂无
中图分类号
O782 [晶体生长工艺];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Laser-induced chemical vapor deposition (LCVD) is an important process for freeform microfabrication of high aspect ratio prototypes. The system consists of a laser beam focused onto a movable substrate in a vacuum chamber. Heat from the laser at or near the focal spot of the beam causes gas in the chamber to react. As a result, solid-phase reaction products are deposited on the substrate to form the microstructure. In this paper, we develop a numerical model for simulating growth of an axisymmetric cylindrical rod by pre-specifying the surface temperatures required for growing the rod and then by solving for the laser power that satisfies the pre-specified temperatures. The solution using least squares is obtained by minimizing the sum of square deviations between the pre-specified surface temperatures and the calculated temperatures from the heat equation with a given laser power as a heat source. Model predictions of the laser power over growth time helped in optimizing the growth process. Rods grown base
引用
收藏
页码:127 / 132
页数:6
相关论文
共 41 条
  • [1] An axisymmetric numerical model for simulating kinetically-limited growth of a cylindrical rod in 3D laser-induced chemical vapor deposition
    Nassar, R
    Dai, WZ
    Chen, Q
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2002, 18 (02) : 127 - 132
  • [2] A numerical model for simulating axisymmetric rod growth in three-dimensional laser chemical vapor deposition
    Dai, W
    Nassar, R
    Zhang, C
    Shabanian, S
    Maxwell, J
    NUMERICAL HEAT TRANSFER PART A-APPLICATIONS, 1999, 36 (03) : 251 - 262
  • [3] Mathematical modeling of three-dimensional kinetically-limited laser chemical vapor deposition
    Nassar, R
    Zhang, C
    Dai, W
    Lan, H
    Maxwell, J
    MICROELECTRONIC ENGINEERING, 2002, 60 (3-4) : 395 - 408
  • [4] Mathematical model for simulating axisymmetric rod growth with kinetically limited and mass transport limited rates
    Lan, H
    Nassar, R
    Dai, WZ
    Zhang, CY
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY VIII, 2003, 4979 : 549 - 560
  • [5] Numerical modeling of pyrolytic laser-induced chemical vapor deposition
    Koutlas, GN
    Vlachos, NS
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 3049 - 3056
  • [6] Growth of metal oxide thin films by laser-induced metalorganic chemical vapor deposition
    Tokita, K
    Okada, F
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 7073 - 7083
  • [7] Growth of carbon nanotubes by open-air laser-induced chemical vapor deposition
    Kwok, K
    Chiu, WKS
    CARBON, 2005, 43 (02) : 437 - 446
  • [8] GROWTH MECHANISMS OF SILICON FILMS PRODUCED BY LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION
    TAMIR, S
    KOMEM, Y
    EIZENBERG, M
    ZAHAVI, J
    THIN SOLID FILMS, 1995, 261 (1-2) : 251 - 255
  • [9] GOLD CRYSTAL-GROWTH BY PHOTOTHERMAL LASER-INDUCED CHEMICAL VAPOR-DEPOSITION
    KODAS, TT
    BAUM, TH
    COMITA, PB
    JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) : 378 - 382
  • [10] GROWTH OF SI AND GE THIN-FILMS BY LASER-INDUCED CHEMICAL VAPOR-DEPOSITION
    ANDREATTA, RW
    LUBBEN, D
    EDEN, JG
    GREENE, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 740 - 741