离子注入Al0.25Ga0.75As/GaAs的Raman光谱研究

被引：0
|
作者：
刘丕均
夏曰源
刘向东
卢贵武
机构：
[1] 山东大学物理系
[2] 山东大学物理系 济南250100
来源：
中国科学:数学 | 2001年 / 09期
关键词：
离子注入; 掺杂; Raman光谱; Rutherford背散射测量; 晶格应力;
D O I：
暂无
中图分类号：
O472.3 [];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
0 .8MeV的Si离子注入Al0 .2 5 Ga0 .75 As/GaAs外延薄膜的弱损伤特征 .注入剂量从 1× 1 0 14 ～ 5× 1 0 15 cm-2 ,对注入后的样品采用了Raman光谱测量 ,观察到了两类声子模式 ,该外延材料的晶格振动显示出“双模”行为 .并计算了在注入层中的应变以及晶格常数随剂量的变化 .此外还测量了样品的Rutherford背散射和沟道谱(RBS/C) ,结果表明与Raman光谱测量一致的结论 :该注入条件只引起材料的弱损伤行为 .
引用
收藏
页码：851 / 856
页数：6
相关论文
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