Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors

被引：0
|
作者：
付晓君 [1 ]
张海英 [1 ]
郭常新 [2 ]
徐静波 [1 ]
黎明 [1 ]
机构：
[1] Institute of Microelectronics,Chinese Academy of Sciences
[2] Department of Physics,University of Science and Technology of China
来源：
Journal of Semiconductors | 2009年 / 08期
关键词：
ZnO nanowire; back-gate; suspended; field-effect transistor; ultraviolet radiation;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The fabrication and photoelectrical characteristics of suspended ZnO nanowire (NW) field-effect transistors (FETs) are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds=2.5 V, the peak transconductance of the FETs is 0.396 μS, the average electron mobility is 50.17 cm2/(V·s), the resistivity is 0.96 × 102 Ω·cm at Vgs = 0 V, and the current on/off ratio (Ion/Ioff) is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation (2.5 μW/cm2) exhibit punch-through and threshold voltage (Vth) shift (from-0.6 V to +0.7 V) and a decrease by almost half of the source-drain current (Ids, from 560 nA to 320 nA) due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.
引用
收藏
页码：60 / 62
页数：3
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