Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z2 Topological Insulator

被引:0
|
作者
邓惠雄 [1 ,2 ]
宋志刚 [1 ]
李树深 [1 ,2 ,3 ]
魏苏淮 [4 ]
骆军委 [1 ,2 ,3 ]
机构
[1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences
[2] University of Chinese Academy of Sciences
[3] Beijing Academy of Quantum Information Sciences
[4] Beijing Computational Science Research Center
基金
中国国家自然科学基金;
关键词
Cu; Te; Sn; TCI; Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z2 Topological Insulator; Pb; Pt;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Topological phase transition in a single material usually refers to transitions between a trivial band insulator and a topological Dirac phase, and the transition may also occur between different classes of topological Dirac phases.It is a fundamental challenge to realize quantum transition between Z2nontrivial topological insulator(TI) and topological crystalline insulator(TCI) in one material because Z2TI and TCI have different requirements on the number of band inversions. The Z2TIs must have an odd number of band inversions over all the time-reversal invariant momenta, whereas the newly discovered TCIs, as a distinct class of the topological Dirac materials protected by the underlying crystalline symmetry, owns an even number of band inversions. Taking PbSnTe2alloy as an example, here we demonstrate that the atomic-ordering is an effective way to tune the symmetry of the alloy so that we can electrically switch between TCI phase and Z2TI phase in a single material. Our results suggest that the atomic-ordering provides a new platform towards the realization of reversibly switching between different topological phases to explore novel applications.
引用
收藏
页码:117 / 130
页数:14
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