Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

被引:0
|
作者
张海龙 [1 ]
刘丰珍 [1 ]
朱美芳 [1 ]
刘金龙 [1 ]
机构
[1] Graduate University of Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
plasma enhanced chemical vapour deposition; microcrystalline silicon; ignition condition;
D O I
暂无
中图分类号
TN304.055 [];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated.The plasma ignition condition is modified by varying the ratio of SiH 4 to H 2 (R H).For plasma ignited with a constant gas ratio,the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH (I Hα /I SiH) at the initial stage,which leads to a thick amorphous incubation layer.For the ignition condition with a profiling R H,the higher I Hα /I SiH values are realized.By optimizing the R H modulation,a uniform crystallinity along the growth direction and a denser μc-Si:H film can be obtained.However,an excessively high I Hα /I SiH may damage the interface properties,which is indicated by capacitance-voltage (C-V) measurements.Well controlling the ignition condition is critically important for the applications of Si thin films.
引用
收藏
页码:314 / 319
页数:6
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