High-performance RF Switch in 0.13 μm RF SOI process

被引：0

作者：

Hong Guan ^{[1
]}

Hao Sun ^{[2
]}

Junlin Bao ^{[1
]}

Zhipeng Wang ^{[2
]}

Shuguang Zhou ^{[2
]}

Hongwei Zhu ^{[2
]}

机构：

[1] School of Microelectronics, Xidian University

[2] Semiconductor Manufacturing International Corporation

来源：

Journal of Semiconductors | 2019年 / 02期

关键词：

RF switch; SOI; insertion loss; isolation; linearity;

D O I：

暂无

中图分类号：

TN405 [制造工艺];

学科分类号：

080903 ; 1401 ;

摘要：

A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this paper, the traditional seriesshunt configuration design was improved by introducing a suitably large DC bias resistor and leakage-preventing PMOS, together with the floating body technique. The performance of the RF switch is greatly improved. Furthermore, a new Ron × Coff testing method is also proposed. The size of this SPST RF switch is 0.2 mm2. This switch can be widely used for present 4 G and forthcoming 5 G mobile phone FEMs.

引用

页码：25 / 28

页数：4