Thermoelectric properties of two-dimensional hexagonal indium–VA

被引：1
|
作者：
毕京云 [1 ]
韩利红 [1 ]
王倩 [1 ]
伍力源 [1 ]
屈贺如歌 [1 ,2 ]
芦鹏飞 [1 ,3 ]
机构：
[1] State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
[2] School of Science, Beijing University of Posts and Telecommunications
[3] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences
来源：
Chinese Physics B | 2018年 / 27卷 / 02期
基金：
中国国家自然科学基金;
关键词：
thermoelectric properties; two-dimensional In–VA; figure of merit;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electrical properties and thermoelectric（TE） properties of monolayer In–VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m;·K;（InP）, 1.31 W·m;·K;（InAs）, 0.87 W·m;·K;（InSb）, and 0.62 W·m;K;（InBi） evaluated at room temperature are close to typical thermal conductivity values of good TE materials(κ < 2 W·m;·K;). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K,which makes In–VA potential TE material working at medium-high temperature.
引用
收藏
页码：506 / 513
页数：8
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