Characteristics of GaN grown on 6H-SiC with different AIN buffers

被引：1

作者：

丁国建 ^{[1
]}

郭丽伟 ^{[1
]}

邢志刚 ^{[1
]}

陈耀 ^{[1
]}

徐培强 ^{[1
]}

贾海强 ^{[1
]}

周均铭 ^{[1
]}

陈弘 ^{[1
]}

机构：

[1] Beijing National Laboratory of Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2010年 / 31卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GaN; AIN; XRD; MOCVD;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

080501 ; 1406 ;

摘要：

Characteristics of GaN grown on 6H-SiC(0001) substrates using different thicknesses of AlN buffers are studied.It is found that the surface morphology and crystal quality of GaN film closely depends on the strain state of the AlN buffer.For a thicker AlN buffer,there are cracks on GaN surface,which make the GaN films unsuitable for applications.While for a thinner AlN buffer,more dislocations are produced in the GaN film,which deteriorates the performance of GaN.Possible generation mechanisms of cracks and more dislocations are investigated and a～100 nm AlN buffer is suggested to be a better choice for high quality GaN on SiC.

引用

页码：33 / 37

页数：5

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