Ultra-high-linearity integrated lithium niobate electro-optic modulators

被引:0
|
作者
HANKE FENG [1 ]
KE ZHANG [1 ]
WENZHAO SUN [1 ]
YANGMING REN [2 ,3 ]
YIWEN ZHANG [1 ]
WENFU ZHANG [2 ,3 ]
CHENG WANG [1 ]
机构
[1] Department of Electrical Engineering & State Key Laboratory of Terahertz and Millimeter Waves,City University of Hong Kong
[2] State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences
[3] University of Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TQ131.11 []; TN761 [调制技术与调制器];
学科分类号
080902 ; 0817 ;
摘要
Integrated lithium niobate(LN) photonics is a promising platform for future chip-scale microwave photonics systems owing to its unique electro-optic properties, low optical loss, and excellent scalability. A key enabler for such systems is a highly linear electro-optic modulator that could faithfully convert analog electrical signals into optical signals. In this work, we demonstrate a monolithic integrated LN modulator with an ultra-high spuriousfree dynamic range(SFDR) of 120.04 dB · Hz4∕5at 1 GHz, using a ring-assisted Mach–Zehnder interferometer configuration. The excellent synergy between the intrinsically linear electro-optic response of LN and an optimized linearization strategy allows us to fully suppress the cubic terms of third-order intermodulation distortions(IMD3) without active feedback controls, leading to ~20 dB improvement over previous results in the thin-film LN platform. Our ultra-high-linearity LN modulators could become a core building block for future large-scale functional microwave photonic integrated circuits by further integration with other high-performance components like low-loss delay lines, tunable filters, and phase shifters available on the LN platform.
引用
收藏
页码:2366 / 2373
页数:8
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