Growth mechanism and quantum confinement effect of silicon nanowires

被引：0
|
作者：
冯孙齐
俞大鹏
张洪洲
白志刚
丁彧
杭青岭
邹英华
王晶晶
机构：
来源：
Science China Mathematics | 1999年 / 12期
基金：
中国国家自然科学基金;
关键词：
one-dimensional nano-structure; Si nawowires; VLS growth mechanism; quantum confinement effect;
D O I：
暂无
中图分类号：
TN305.5 [氧化层生长];
学科分类号：
1401 ;
摘要：
The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.
引用
收藏
页码：1316 / 1322
页数：7
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