High-performance germanium n~+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

被引：0

作者：

黄巍 ^{[1
]}

陆超 ^{[1
]}

余珏 ^{[1
]}

魏江镔 ^{[1
]}

陈超文 ^{[1
]}

汪建元 ^{[1
]}

徐剑芳 ^{[1
]}

王尘 ^{[2
]}

李成 ^{[1
]}

陈松岩 ^{[1
]}

刘春莉 ^{[3
]}

赖虹凯 ^{[1
]}

机构：

[1] Department of Physics, Semiconductor Photonics Research Center, Xiamen University

[2] Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies

[3] Xiamen University of Technology

来源：

Chinese Physics B | 2016年 / 25卷 / 05期

基金：

中国国家自然科学基金;

关键词：

germanium; metal-induced dopant activation; NiGe; n+/P junction;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

High-performance Ge n~+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained Ni Ge electroded Ge n+/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm~2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.

引用

页码：316 / 319

页数：4

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