Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire

For nanostructure SnO, it is very difficult for its electric properties to accurately control due to the presence of abundant surface states. The introduction of Sm can improve the traps in surface space charge region of SnOnanowires, resulting in a controllable storage charge effect. For the single nanowire-based two-terminal device, two surface state-related back-to-back diodes are formed. At a relatively large voltage, electrons can be injected into the traps in surface space charge region from negative electrode, resulting in a decrease of surface barrier connected with negative electrode, and contrarily electrons can be extracted from the traps in surface space charge region into positive electrode, resulting in an increase of surface barrier connected with positive electrode. The reversible injection and extraction induce a nonvolatile resistive switching memory effect.