共掺杂LiGa5O8∶Cr3+长余辉材料的制备及发光特性

被引：0
|
作者：
黄维超
李绪诚
崔瑞瑞
龚新勇
邓朝勇
机构：
[1] 贵州大学大数据与信息工程学院电子科学系贵州省电子功能复合材料特色重点实验室
来源：
半导体光电 | 2018年 / 39卷 / 05期
关键词：
长余辉; 近红外; 掺杂; 陷阱;
D O I：
10.16818/j.issn1001-5868.2018.05.010
中图分类号：
TQ422 [光化学物质]; O482.31 [发光学];
学科分类号：
摘要：
采用高温固相反应法制备了Si4+、Ge4+和Sn4+离子掺杂的LiGa5O8∶Cr3+长余辉材料,系统研究了掺杂对LiGa5O8∶Cr3+光致发光和长余辉性能的影响。实验结果表明,所制备的系列材料能产生650～800nm的近红外余辉发射,主发射峰位于717nm,来源于Cr3+离子的2E→4A2特征跃迁,与未进行掺杂的样品相比,掺杂Si 4+、Ge4+和Sn4+离子的LiGa5O8∶Cr3+余辉发光强度均得到增强,余辉性能显著改善。热释光测试结果表明,Si 4+、Ge4+和Sn4+离子掺入主要提高了LiGa5O8∶Cr3+的陷阱浓度,且使得有效陷阱的数量增加,从而改善了LiGa5O8∶Cr3+的余辉性能。
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页码：654 / 658
页数：5
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