A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE

被引：0
|
作者：
张桂成 [1 ]
徐少华 [1 ]
水海龙 [1 ]
机构：
[1] Shanghai Institute of Metallurgy Academia Sinica
来源：
JournalofElectronics(China) | 1984年 / 03期
关键词：
InP; Zn; A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE; AT;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The diffusion of Zn in InP at low temperature is investigated.The experiment is accomplishedin an evacuated and sealed quartz ampoule using ZnPas the source of Zn.The electrical characteristics of the diffusion samples obtained by the isotemperature processand the two-temperature process have been compared.It is found that with the two-temperatureprocess one can obtain a smooth,damageless and high-concentration surface layer.This processhas been applied to fabricate InGaAsP/InP light emitting diodes,and the diodes obtained have anoutput power of≥1mW with a series resistance of 2—5Ω.The behaviors of Zn diffusion in InPare discussed.
引用
收藏
页码：177 / 181
页数：5
相关论文
共 50 条
12345