Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

被引：0

作者：

郑雪峰 ^{[1
]}

王奥琛 ^{[1
]}

侯晓慧 ^{[2
]}

王颖哲 ^{[1
]}

文浩宇 ^{[1
]}

王冲 ^{[1
]}

卢阳 ^{[1
]}

毛维 ^{[1
]}

马晓华 ^{[1
]}

郝跃 ^{[1
]}

机构：

[1] Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

[2] School of Computer Science and Technology, Xidian University

来源：

Chinese Physics Letters | 2017年 / 02期

基金：

中国国家自然科学基金;

关键词：

GaN;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The thermal management is an important issue for AlGaN/GaN high-electron-mobility transistors（H/EMTs）.In this work,the influence of the diamond layer on the electrical characteristics of AlGaN/GaN HEMTs is investigated by simulation. The results show that the lattice temperature can be effectively decreased by utilizing the diamond layer. With increasing the drain bias, the diamond layer plays a more significant role for lattice temperature reduction. It is also observed that the diamond layer can induce a negative shift of threshold voltage and an increase of transconductance. Furthermore, the influence of the diamond layer thickness on the frequency characteristics is investigated as well.By utilizing the 10-μm-thickness diamond layer in this work, the cutoff frequency f;and maximum oscillation frequency f;can be increased by 29% and 47%, respectively. These results demonstrate that the diamond layer is an effective technique for lattice temperature reduction and the study can provide valuable information for HEMTs in high-power and high-frequency applications.

引用

页码：98 / 101

页数：4

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