From lab to fab: path forward for 2D material electronics

被引:0
|
作者
Hongkai NING [1 ]
Zhihao YU [2 ,3 ]
Taotao LI [1 ]
Haoliang SHEN [4 ]
Gen LONG [4 ]
Yi SHI [1 ]
Xinran WANG [1 ,2 ,4 ]
机构
[1] National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
[2] School of Integrated Circuits,Nanjing University
[3] College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications
[4] Suzhou Laboratory
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
D O I
暂无
中图分类号
TN305 [半导体器件制造工艺及设备];
学科分类号
1401 ;
摘要
The increasing demand for computation requires the development of energy-efficient logic devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are expected to provide possible solutions at the sub-1 nm technology node. Furthermore, taking advantage of the van der Waals nature, the low-temperature back-end of line integration with silicon may occur in the near future. In this perspective, vital progress in material synthesis, device engineering, and integration technologies toward integrated circuits based on 2D materials is reviewed. The challenges and important milestones on the roadmap for the next decade toward the fab adoption of 2D materials are outlined. Particularly, performance,power, area, cost, and equipment for further technology development in this area are proposed as key metrics and enablers.
引用
收藏
页码:115 / 121
页数:7
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