C3N4/MnCo2S4复合材料的制备及其电容性能研究

被引：1

作者：

王建芳

杨和平

李凯斌

丛世强

张柏洁

郭珊

机构：

[1] 商洛学院化学工程与现代材料学院,陕西省尾矿资源综合利用重点实验室

来源：

无机盐工业 | 2023年 / 55卷 / 07期

关键词：

MnCo2S4; C3N4纳米片; 防剥落; 超级电容器;

D O I：

10.19964/j.issn.1006-4990.2022-0571

中图分类号：

TB332 [非金属复合材料]; TM53 [电容器];

学科分类号：

摘要：

以剥离C3N4（氮化碳）纳米片为保护层，在水热过程中对MnCo2S4进行包覆修饰，得到C3N4/MnCo2S4复合材料。借助于C3N4纳米片的包覆保护，复合材料表现出优异的比电容和良好的循环稳定性。采用三电极体系，在6 mol/L的KOH电解液中，当扫描速率为5 m V/s时C3N4/MnCo2S4电极材料的比电容可达到565 F/g，而未包覆修饰的MnCo2S4的比电容为468 F/g。1 A/g的电流密度下，MnCo2S4、C3N4/MnCo2S4电极材料经2 000次的循环充放电测试后，比电容保持率分别为77%和83%。C3N4纳米片对泡沫镍上所生长的MnCo2S4起到保护和防剥落作用，纳米片包覆法为高比电容和良好循环稳定性的电极材料制备提供了新的技术路线。

引用

页码：70 / 74

页数：5

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