High　Performance　AlGaAs　Quantum　Well　Lasers　with　Low　Beam　Divergence　Grown　by　Molecular　Beam　Epitaxy

被引：0

作者：

YANG Guowen

XIAO Jianwei

XU Zuntu

XU Junying ZHANG Jingming

CHEN Lianghui

WANG Qiming(Institute of Semiconductors

机构：

来源：

Chinese Journal of Lasers | 1995年 / 04期

关键词：

semiconductor lasers; quantum well; molecular beam epitaxy;

D O I：

暂无

中图分类号：

TN24 [激光技术、微波激射技术];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

ＨｉｇｈＰｅｒｆｏｒｍａｎｃｅＡｌＧａＡｓＱｕａｎｔｕｍＷｅｌｌＬａｓｅｒｓｗｉｔｈＬｏｗＢｅａｍＤｉｖｅｒｇｅｎｃｅＧｒｏｗｎｂｙＭｏｌｅｃｕｌａｒＢｅａｍＥｐｉｔａｘｙ￥ＹＡＮＧＧｕｏｗｅｎ；ＸＩＡＯＪｉａｎｗｅｉ；ＸＵＺｕｎｔｕ；ＸＵＪｕｎｙｉ...

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页码：289 / 294

页数：6

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High Performance AlGaAs Quantum Well Lasers with Low Beam Divergence Grown by Molecular Beam Epitaxy

High　Performance　AlGaAs　Quantum　Well　Lasers　with　Low　Beam　Divergence　Grown　by　Molecular　Beam　Epitaxy