Formation of Al-Si Composite Oxide Film by Hydrolysis Precipitation and Anodizing

This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide film growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20 V are enhanced, and the leakage current of the aluminum composite oxide film is reduced through incorporation of Si oxide spec ies.