混晶β-(Al,Ga)2O3的禁带调节(英文)

[1] β-Ga2O3掺Al的电子结构与能带特性研究 [J]. 功能材料, 2014, 45 (12) : 12102 - 12107

[2] Be和Ca掺杂纤锌矿ZnO的晶格常数与能带特性研究 [J]. 物理学报, 2012, 61 (22) : 378 - 386

[3] Oxygen-radical-assisted pulsed-laser deposition of β -Ga 2 O 3 and β -(Al x Ga 1? x ) 2 O 3 films[J] . Ryo Wakabayashi,Takayoshi Oshima,Mai Hattori,Kohei Sasaki,Takekazu Masui,Akito Kuramata,Shigenobu Yamakoshi,Kohei Yoshimatsu,Akira Ohtomo.Journal of Crystal Growth . 2015

[4] On the bulk β-Ga 2 O 3 single crystals grown by the Czochralski method[J] . Zbigniew Galazka,Klaus Irmscher,Reinhard Uecker,Rainer Bertram,Mike Pietsch,Albert Kwasniewski,Martin Naumann,Tobias Schulz,Robert Schewski,Detlef Klimm,Matthias Bickermann.Journal of Crystal Growth . 2014

[5] Wide bandgap engineering of (GaIn) 2 O 3 films[J] . Fabi Zhang,Katsuhiko Saito,Tooru Tanaka,Mitsuhiro Nishio,Qixin Guo.Solid State Communications . 2014

[6] Growth, structure and carrier transport properties of Ga 2 O 3 epitaxial film examined for transparent field-effect transistor[J] . Kosuke Matsuzaki,Hidenori Hiramatsu,Kenji Nomura,Hiroshi Yanagi,Toshio Kamiya,Masahiro Hirano,Hideo Hosono.Thin Solid Films . 2005 (1)

[7] First principles study on electronic structure of β-Ga2O3 [J]. SOLID STATE COMMUNICATIONS, 2004, 131 (12) : 739 - 744

[8] Large-size β-Ga 2 O 3 single crystals and wafers[J] . Encarnación G. Víllora,Kiyoshi Shimamura,Yukio Yoshikawa,Kazuo Aoki,Noboru Ichinose.Journal of Crystal Growth . 2004 (3)

[9] Presumption and improvement for gallium oxide thin film of high temperature oxygen sensors[J] . M Ogita,S Yuasa,K Kobayashi,Y Yamada,Y Nakanishi,Y Hatanaka.Applied Surface Science . 2003

[10] Floating zone growth of β -Ga 2 O 3 : a new window material for optoelectronic device applications[J] . Y Tomm,J.M Ko,A Yoshikawa,T Fukuda.Solar Energy Materials and Solar Cells . 2001 (1)

[1] β-Ga2O3掺Al的电子结构与能带特性研究 [J]. 功能材料, 2014, 45 (12) : 12102 - 12107

[2] Be和Ca掺杂纤锌矿ZnO的晶格常数与能带特性研究 [J]. 物理学报, 2012, 61 (22) : 378 - 386

[3] Oxygen-radical-assisted pulsed-laser deposition of β -Ga 2 O 3 and β -(Al x Ga 1? x ) 2 O 3 films[J] . Ryo Wakabayashi,Takayoshi Oshima,Mai Hattori,Kohei Sasaki,Takekazu Masui,Akito Kuramata,Shigenobu Yamakoshi,Kohei Yoshimatsu,Akira Ohtomo.Journal of Crystal Growth . 2015

[4] On the bulk β-Ga 2 O 3 single crystals grown by the Czochralski method[J] . Zbigniew Galazka,Klaus Irmscher,Reinhard Uecker,Rainer Bertram,Mike Pietsch,Albert Kwasniewski,Martin Naumann,Tobias Schulz,Robert Schewski,Detlef Klimm,Matthias Bickermann.Journal of Crystal Growth . 2014

[5] Wide bandgap engineering of (GaIn) 2 O 3 films[J] . Fabi Zhang,Katsuhiko Saito,Tooru Tanaka,Mitsuhiro Nishio,Qixin Guo.Solid State Communications . 2014

[6] Growth, structure and carrier transport properties of Ga 2 O 3 epitaxial film examined for transparent field-effect transistor[J] . Kosuke Matsuzaki,Hidenori Hiramatsu,Kenji Nomura,Hiroshi Yanagi,Toshio Kamiya,Masahiro Hirano,Hideo Hosono.Thin Solid Films . 2005 (1)

[7] First principles study on electronic structure of β-Ga2O3 [J]. SOLID STATE COMMUNICATIONS, 2004, 131 (12) : 739 - 744

[8] Large-size β-Ga 2 O 3 single crystals and wafers[J] . Encarnación G. Víllora,Kiyoshi Shimamura,Yukio Yoshikawa,Kazuo Aoki,Noboru Ichinose.Journal of Crystal Growth . 2004 (3)

[9] Presumption and improvement for gallium oxide thin film of high temperature oxygen sensors[J] . M Ogita,S Yuasa,K Kobayashi,Y Yamada,Y Nakanishi,Y Hatanaka.Applied Surface Science . 2003

[10] Floating zone growth of β -Ga 2 O 3 : a new window material for optoelectronic device applications[J] . Y Tomm,J.M Ko,A Yoshikawa,T Fukuda.Solar Energy Materials and Solar Cells . 2001 (1)