Si/Si1-xGex异质结器件

[1] Miles G.GaAs vs.Si ECL:HBTs intensify the battle. Solid State Technology . 1990

[2] Kamins T I et al.Small-geometry,high-perfor-mance,Si/Si1-xGex HBT. IEEE Electron Device Letters . 1989

[3] Patton G L et al.Graded-SiGe-base poly-emitter HBT. IEEE Electron Device Letters . 1989

[4] Alan S Z et al.Predicted propagation delay of Si/SiGe HBECL circuit. IEEE Journal of Solid State Circuits . 1990

[5] Patton G L et al.Graded-SiGe-base,poly-emitter HBT. IEEE Electron Device Letters .

[6] Won T et al.High-speed performance of Si/Si1-xGex HBT. IEEE Electron Device Letters . 1989

[7] Patton G L et al.75GHz f_T SiGe-base HBT. IEEE Electron Device Letters . 1990

[8] Shafi Z A et al.The importance of neutral base recombination in compromising the gain of Si/SiGe HBT. IEEE Transactions on Electron Devices . 1991

[1] Miles G.GaAs vs.Si ECL:HBTs intensify the battle. Solid State Technology . 1990

[2] Kamins T I et al.Small-geometry,high-perfor-mance,Si/Si1-xGex HBT. IEEE Electron Device Letters . 1989

[3] Patton G L et al.Graded-SiGe-base poly-emitter HBT. IEEE Electron Device Letters . 1989

[4] Alan S Z et al.Predicted propagation delay of Si/SiGe HBECL circuit. IEEE Journal of Solid State Circuits . 1990

[5] Patton G L et al.Graded-SiGe-base,poly-emitter HBT. IEEE Electron Device Letters .

[6] Won T et al.High-speed performance of Si/Si1-xGex HBT. IEEE Electron Device Letters . 1989

[7] Patton G L et al.75GHz f_T SiGe-base HBT. IEEE Electron Device Letters . 1990

[8] Shafi Z A et al.The importance of neutral base recombination in compromising the gain of Si/SiGe HBT. IEEE Transactions on Electron Devices . 1991