Investigation　of　EL2　Defect　in　10　MeV　Electron　Irradiated　Undoped　Semi－insulating　LEC　GaAs

被引：0
|
作者：
吴凤美
施毅
陈武鸣
吴红卫
赖启基
赵周英
机构：
来源：
Rare Metals | 1995年 / 04期
关键词：
Undoped SI-GaAs; EL2; OTCS technique; 10 MeV electron irra-diation;
D O I：
暂无
中图分类号：
TN304.2 [化合物半导体];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
ＩｎｖｅｓｔｉｇａｔｉｏｎｏｆＥＬ２Ｄｅｆｅｃｔｉｎ１０ＭｅＶＥｌｅｃｔｒｏｎＩｒｒａｄｉａｔｅｄＵｎｄｏｐｅｄＳｅｍｉ－ｉｎｓｕｌａｔｉｎｇＬＥＣＧａＡｓＷｕＦｅｎｇｍｅｉ，ＳｈｉＹｉ，ＣｈｅｎＷｕｍｉｎｇ，ＷｕＨｏｎｇｗｅｉａｎｄＬａｉＱｉｊｉ（...
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页码：249 / 252
页数：4
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