Influence of Boron doping on microcrystalline silicon growth

被引：0

作者：

李新利 ^{[1
]}

陈永生 ^{[1
]}

杨仕娥 ^{[1
]}

谷锦华 ^{[1
]}

卢景霄 ^{[1
]}

郜小勇 ^{[1
]}

李瑞 ^{[1
,2
]}

焦岳超 ^{[1
]}

高海波 ^{[1
]}

王果 ^{[1
]}

机构：

[1] The Key Laboratory of Material Physics of Ministry of Education,School of Physics and Engineering,Zhengzhou University

[2] Henan University of Technology

来源：

Chinese Physics B | 2011年 / 20卷 / 09期

基金：

中国国家自然科学基金;

关键词：

microcrystalline silicon thin film; surface roughness; shadowing effect;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

080501 ; 1406 ;

摘要：

Microcrystalline silicon (μc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method.The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope.It is shown that the growth exponent β and the roughness exponent α are about 0.369 and 0.95 for the undoped thin film,respectively.Whereas,for the boron-doped μc-Si:H thin film,β increases to 0.534 and α decreases to 0.46 due to the shadowing effect.

引用

页码：325 / 330

页数：6

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